【日時】2014年11月11日（火）

 

【場所】東北大学 多元物質科学研究所（宮城県仙台市片平2-1-1）

素材工学研究棟 1号館　3階交流スペース（地図）

 

 

【特定研究テーマ】グリーンナノサイエンス・デバイス研究開発

 

【特定研究課題A-2】「ナノテクノロジーを基盤とする次世代エネルギー材料・デバイスの物質科学」

 

 

【プログラム】

14:00～14:05

開会の挨拶 「特定研究課題のミッション」　

東北大学 多元物質科学研究所 本間 格　

 

14:10～15:30　

「Growth mechanism of ultra-high mass density carbon nanotube forests on conductive supports at low temperature」

　 　

Hisashi SUGIME, PhD,（ケンブリッジ大学　杉目博士）　

Research Associate Department of Engineering, University of Cambridge 9 JJ Thomson Avenue, CB3 0FA, Cambridge, UK

 

15:30～16:00　総合討論

 

 

【主催】物質・デバイス領域共同研究拠点

 

【共催】日本金属学会　東北支部／東北大学 多元研サステナブル理工学研究センター／附置研究所間アライアンスによるナノとマクロをつなぐ 物質・デバイス・システム創製戦略プロジェクト(ナノマクロ物質・デバイス・システム創製アライアンス)／ 最先端電池基盤技術コンソーシアム「垂直統合型技術結集と新たな産学連携システムによる最先端電池基盤技術の創出」

 

 

【問合先】本間 格（東北大学 多元物質科学研究所）・高山（秘書）（takayama*tagen.tohoku.ac.jp,*=@／TEL 022-217-5815）

 

 

講演アブストラクト

Title:Growth mechanism of ultra-high mass density carbon nanotube forests on conductive supports at low temperature.

 

Abstract:Due to their outstanding properties, carbon nanotubes (CNTs) are envisaged as a material for future technologies such as interconnects in LSI, heat dissipation devices, and chemical sensors. To realize the proposed applications, chemical vapor deposition (CVD) is the only technique to grow CNTs, and the control of tube morphologies is necessary. Vertically-aligned dense CNT forests on conductive supports are one of the promising morphologies as an assembly of CNTs, since individual CNTs are difficult to control and use. Compare to the forest growth on insulating supports such as Al2O3 or SiO2, the growth on conductive supports is more challenging [1]. This mainly comes from the difficulties of the catalyst nanoparticle formation, so we need to engineer the catalyst/underlayer systems. On top of that, for CMOS compatible processes, we have to grow CNTs at a temperature lower than 450 °C. Recently, using Co-Mo catalyst, we have reported the growth of CNT forests on conductive Ti/Cu supports at 450 °C with a record high mass density of 1.6 g cm-3 [2]. This mass density is four times higher than that without Mo and the ohmic resistance is observed between CNT forest and Ti/Cu underlayer. We also have reported the growth kinetics and termination mechanism of the forests [3]. The role of Mo and the growth kinetics and mechanism of the dense CNT forest will be discussed.

 

[1] J. Robertson, et al., Jpn. J. Appl. Phys. 51 (2012) 01AH01.

[2] H. Sugime, et al., Appl. Phys. Lett. 103 (2013) 073116.

[3] H. Sugime, et al., ACS Appl. Mater. Interfaces 6 (2014), 15440.