Research Themes

Ultrathin Oxide Film for Nanodevices

Our novel oxidation process using neutral oxygen beam realizes to form damage-free metallic and semiconductor oxide films.

fig.Ultrathin Oxide Film for Nanodevices

New development of low power consumption and highly-dense nanoelectronics device is required because of the limitation of silicon technology. Among of them, resistive memory (ReRAM) and Ge transistor is one of the candidates for future generation nanodevices. Our laboratory develops a nanoionic-based ReRAM providing an ultrathin metallic oxide. In this memory device, movement of ions and electrons with nanoscale range in a metal oxide film are controlled. We also investigate on a Ge oxide gate stack structure for MOS transistor, which requires low interface trap density and low EOT value. Therefore, high quality and very thin oxide film is necessary to achieve ReRAMs and Ge transistors. To obtain ideal characterization of oxide film, low-temperature and damage-free oxidation using neutral oxygen beam is an effective process. Using neutral beam process, we achieved the fabrication and operation of tantalum oxide-based ReRAM and Ge MOS capacitor with high-k aluminum oxide film.

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