Professor Samukawa Wins the Second JSAP Plasma Electronics Award
Title of Award-Winning Paper
Highly crystalline 5H-polytype of sp3-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm
Name of Journal
Applied Physics Letters, Vol. 81, No. 24, pp. 4547-4549 (2002).
Authors
Shojiro Komatsu, Keiji Kurashima, Hisao Kanda, Katsuyuki Okada,
and Mamoru Mitomo (National Institute for Materials Science)
Yusuke Moriyoshi and Yoshiki Shimuzu (Hosei University)
Masaharu Shiratani (Kyushu University)
Toshiki Nakano (National Defense Academy)
Seiji Samukawa (Tohoku University)
Reasons for Award
The award recipients developed a new composite process that combines laser abrasion with thermal plasma, and demonstrated vapor deposition of highly crystalline 5H-polytype of sp3-bonded boron nitride (although about 10 microns in size). The highly crystalline structure has new physical properties, with a sharp light emission band in the far ultraviolet spectrum at 225nm, which does not require a vacuum. The paper that won the award summarized these achievements, which have been highly praised for their scientific value and are expected to open up new aspects of plasma processes and contribute to the further development of the plasma electronic field.