- 論文
1. Impacts of plasma-induced damage due to UV light irradiation during
etching on Ge fin fabrication and device performance of Ge fin field-effect
transistors Applied Physics Express, 10, 2017, 026501. W. Mizubayashi,
S. Noda, Y. Ishikawa, T. Nishi, A. Kikuchi, H. Ota, P. Su, Y. Li, S. Samukawa
and K. Endo
2. Atomic layer defect-free etching for germanium using HBr neutral beam
Journal of Vacuum Science & Technology A, 37, 2019, 051001.
Takuya Fujii, Daisuke Ohori, Shuichi Noda, Yosuke Tanimoto, Daisuke Sato,
Hideyuki Kurihara, Wataru Mizubayashi, Kazuhiko Endo, Yiming Li, Yao-Jen
Lee, Takuya Ozaki, and Seiji Samukawa
3. Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN
Micro‐Light‐Emitting Diodes Physica Status Solidi (a), 216, 2019, 1900380.
J. Zhu, T. Takahashi, D. Ohori, K. Endo, S. Samukawa, M. Shimizu, X.-L.
Wang 1
4. Microwave Annealing Technologies for Variability Reduction of Nanodevices:
A Review of Their Impact on FinFETs IEEE Nanotechnology Magazine, 13, 2019,
34-38. K. Endo and Y.-J. Lee
5.Performance improvement of Ge fin field-effect transistors by post-fin-fabrication
annealing Japanese Journal of Applied Physics, 59, 2020, SIIE05. W. Mizubayashi,
H. Oka, T. Mori, Y. Ishikawa, S. Samukawa, K. Endo
6. High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching
and GaN regrowth: towards directional micro-LED in top-down structure Semiconductor
Science and Technology, 35, 2020, 075001. K. Zhang, T. Takahashi, D. Ohori,
G. Cong, K. Endo, N. Kumagai, S. Samukawa, M. Shimizu, X. Wang
7. High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free
and Roughness-Free Etching IEEE Open Journal of Nanotechnology, 2, 2021,
26-30. D. Ohori, T. Fujii, S. Noda, W. Mizubayashi, K. Endo, Y.-J. Lee,
J.-H. Tarng, Y. Li, S. Samukawa
8. Management of Phonon Transport in Lateral Direction for Gap-controlled
Si Nanopillar/SiGe Interlayer Composite Materials IEEE Open Journal of
Nanotechnology, 2, 2021, 148 -152. D. Ohori, M. Chuang, A. Sato, S. Takeuchi,
M. Murata, J. Yamamoto, M. Lee, K. Endo, Y. Li, J. Tarng, Y, Lee, S. Samukawa
9. Surface wettability of silicon nanopillar array structures fabricated
by biotemplate ultimate top-down processes Journal of Vacuum Science &
Technology A, 39, 2021, 023202. S. Takeuchi, D. Ohori, M. Sota, T. Ishida,
Y. Li, J.-H. Tarng, K. Endo, S. Samukawa
10. Room-temperature and High-quality HfO2/SiO2 Gate Stacked Film Grown
by Neutral Beam Enhanced Atomic Layer Deposition Journal of Vacuum Science
& Technology A, 40, 2022, 022405. B. Ge, D. Ohori, Y. Chen,
T. Ozaki, K. Endo, Y. Li, J. Tarng, S. Samukawa
学会発表
1. Defect-Free Germanium Etching for 3D Fin MOSFET Using Neutral Beam Etching
IEEE International Conference on Nanotechnology
En-Tzu Lee, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, Seiji Samukawa,
Lowering of effective work function induced by metal carbide/HfO2 interface
dipole for advanced CMOS IEEE International Conference on Nanotechnology,
Sendai, 2016, 4 pages.
2. Atomic Layer Etching, Deposition and Modification Processes for Novel
Nano-materials and Nano-devices 3rd Asia-Pacific Conference on Plasma Physics,
PL-26, Hefei, China, 2019, 1 page. Seiji Samukawa, Kazuhiko Endo
3. Effects of Nb Oxide Films Controlled by Neutral Beam Oxidation on Q-value
of Superconducting Resonators 34th International Symposium on Superconductivity,
ED8-3, Virtual Meeting, 2021, 2 pages. Taichi Konno, Daisuke Ohori, Shuichi
Noda, Mutsuo Hidaka, Kazuhiko Endo, Hiroto Mukai, Akiyoshi Tomonaga, Jaw-Shen
Tsai, and Seiji Samukawa
4. Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-Devices
21st IEEE International Conference on Nanotechnology, ThAT2.5, Virtual
meeting, 2021, 4 pages. D. Ohori, M. Murata, A. Yamamoto, K. Endo, M.-H.
Chuang, M.-Y. Lee, Y. Li, J.-H. Tarng, Y.-J. Lee, and S. Samukawa
5. Surface Wettability of Nanopillar Array Structures Fabricated by Bio-Template
Ultimate Top-Down Processes 21st IEEE International Conference on Nanotechnology,
ThAT2.6, Virtual meeting, 2021, 4 pages. S. Takeuchi, D. Ohori, T. Ishida,
M. Tanaka, M. Sota, K. Endo, and S. Samukawa
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