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Magnetic substance and transition metal etching for MRAM using complex reaction mechanisms presented at 2014 VLSI Technology Symposium
Utilizing neutral beam process to control defects at the atomic level, Professor Samukawa and Tokyo Electron realized complex reactions in transition metals and magnetic materials. At the VLSI Technology Symposium, they presented the world's first method for realizing simple chemical reactions at room temperature. The response from the audience was tremendous, and the presenters Mr. Gu of Tokyo Electron and Professor Samukawa were overwhelmed with questions. They also received compliments from many audience members. They seek to accelerate the practical implementation of neutral beam technology.
Professor Samukawa and Mr. Gu's presentation was also covered in the June 11, 2014 edition of the Nikkei Sangyo Shimbun
