Professor Samukawa participates in IEEE IEDM as program committee member, and presents joint research with Taiwan (December 4 - 7, 2016)
Professor Samukawa participated as a Program Committee member of IEEE IEDM, the world's most prestigious semiconductor device conference, held from December 4 to 7. He also presented major achievements from collaboration with researchers in Taiwan, to great response.
Professor Samukawa participated from the short course, and presented the state of development of the newest devices. He discussed how device development has already proceeded to around 5 nm, and he could sense the speed in the development post-3nm devices, which has already been targeted. Also, this era is filled with new materials, and next-generation germanium and 2D materials are drawing attention. In all cases, control of surface and interface defects is required. Thus the importance of neutral beam technology is increasing all the more.
Of the results of joint research with National Chiao Tung University and the National Nano Device Laboratories, the completed version of 6nm Ge Fin FET especially drew attention, eliciting many questions from attendees. There were especially many questions about the quantum effect.
During the conference, Professor Samukawa participated in various workshops and exchanged much information. He was also able to meet his former students, Dr. Otake of Tokyo Electron America and Dr. Ishikawa of Lam Research, and greatly enjoyed the time with them. Both former students currently are active in the U. S. and are rising stars in their companies. Professor Samukawa's greatest pleasure at this conference was giving a lecture during which he presented the wonderful results of joint research between National Chiao Tung University and Samukawa Lab. This shows that students in Taiwan who receive guidance from Professor Samukawa have begun to become active.
This year's IEDM demonstrated the power of neutral beam technology as well as the deepening of collaboration between Samukawa Lab and Taiwan.