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203rd Japan Society of Applied Physics Silicon Technology Research Meeting "Nitride semiconductor power device research trends" held (Nov. 16, 2017)
A seminar hosted by the Japan Society of Applied Physics silicon technology subcommittee, for which Dr. Samukawa serves as chairman, was held on Nov. 16 at the National Institute of Advanced Industrial Science and Technology Rinkai Fukutoshin Center. The latest trends in nitride semiconductor substrate deposition technology, etching technology, device technology and circuit technology were discussed.
Dr. Samukawa gave the introductory talk for this research meeting and a lecture on lowering process temperatures and decreasing the damage in state-of-the-art devices. Prof. Imaoka from Tokyo Institute of Technology, Mr. Kikuchi from Tokyo Electron, and Prof. Tanigawa from Tohoku University lectured on GaN deposition technology ; Professor Kaji from Nagoya University and Prof. Suemitsu from Tohoku University on device technology; and NTT's Mr. Shimizu on integrated circuit technology.
Opinions were actively exchanged, and it was realized that a breakthrough in process technology is extremely important for the future of GaN devices.
